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4G0-035-080-B
MT41K512M8DA-107 AIT:P TR
TC of –40°C to +105°C – 64ms
featuring 50-μA (typical) standby current
Analog Devices RF Switch IC Part #HMC641ALC4
Micron Technology DRAM SDRAMMobile-, Part #: MT41K256M16TW-107 AAT:P | Dynamic random access memory | DEX Monitor 4G0-035-080-BMicron Technology DRAM SDRAM DDR3L, Part #: MT41K256M16TW 107 AAT: P features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS
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